Variability at these interfaces, or heterojunctions, dramatically impacts device performance. Critical to TFET performance when they are made from combinations of III-V materials is the need for abrupt and uniform interfaces among the dissimilar materials. Using III-V arsenide-antimonide hetero-junctions in designing TFETs ensures high performance through high on-current even at extremely low voltages (<0.5 V). In a TFET, the electrons undergo quantum mechanical tunneling from the source to the channel region which filters out the high-energy carriers resulting in very steep switching and energy savings. We are developing a Tunnel Field-Effect-Transistor (TFET) based on III-V arsenide-antimonide hetero-junctions to provide high performance at extremely low power consumption. Conventional Silicon-MOS Field-Effect-Transistors (MOSFETs) cannot meet these demands. ![]() b and c).Īs we venture into the era of Internet of Things with more intelligent and connected electronic devices, there is an increasing need for more energy efficient data processing. The team at Penn State collaborated with researchers from Intel Corporation to use Atom Probe Tomography and Time-of-flight Spectroscopy to characterize critical tunnel junction interface in TFET (Fig. a) is obtained through Transmission Electron Microscopy (TEM). Technique: Cross-section micrograph of fabricated III-V compound semiconductor based TFET (Fig. Pennsylvania State University, University Park, PA 16802 Suman Datta, EE, Pennsylvania State University and University of Notre Dame Department of Electrical Engineering Atom Probe characterization of TFET tunnel junction done in collaboration with Markus Kuhn at Intel Corporation (Metrology Group, Hillsboro, OR).Īdvisor: Dr. TFET fabrication and Transmission Electron Micrograph by Rahul Pandey. This high performance stems from quantum mechanical tunneling of electrons across the tunnel junction interface detailed in (b) and (c). ![]() TFETs are high impact next generation transistors which can provide high performance with extreme energy efficiency compared to conventional silicon-transistors. (a) Cross-section micrograph of Tunnel Field-Effect-Transistor (TFET).
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